Search results for "Stacking faults"

showing 3 items of 3 documents

New zeolite-like RUB-5 and its related hydrous layer silicate RUB-6 structurally characterized by electron microscopy.

2020

RUB-5 and its related hydrous layer silicate RUB-6 were synthesized in the 1990s, but so far their structures have remained unknown due to their low crystallinity and disorder. The combination of 3D electron diffraction, X-ray powder diffraction, high-resolution transmission electron microscopy, structural modelling and diffraction simulations has enabled a comprehensive description of these two nanomaterials, revealng a new framework topology and a unique silica polymorph.

DiffractionMaterials sciencecomputational modellingStackinginorganic materials02 engineering and technology010402 general chemistry01 natural sciencesBiochemistrydiffuse scatteringMetalexit wave reconstructionchemistry.chemical_compoundpolymorph predictionframework-structured solidsGeneral Materials ScienceZeolitelcsh:Sciencestacking faultsElectron crystallographymicroporous materialsGeneral Chemistry021001 nanoscience & nanotechnologyCondensed Matter PhysicsResearch PapersNanocrystalline materialSilicate3D electron diffraction0104 chemical sciencesSilanolCrystallographyelectron crystallographychemistryvisual_artvisual_art.visual_art_mediumlcsh:Q0210 nano-technologyIUCrJ
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Distorted f.c.c. arrangement of gold nanoclusters: a model of spherical particles with microstrains and stacking faults

2008

The structures of two samples of gold nanoclusters supported on silica were studied by X-ray powder diffraction (XRD) and X-ray absorption spectroscopy. The data relative to both techniques were analysed by an approach involving simulation based on structural models and fitting. The XRD model concerned a distorted f.c.c. (face-centred cubic) arrangement, with microstrains and parallel stacking faults in approximately spherical particles; as an alternative possibility, a linear combination of ordered f.c.c. and noncrystalline (decahedral and icosahedral) particles was also taken into account. Both approaches gave calculated patterns closely resembling the experimental data. X-ray absorption …

Materials scienceExtended X-ray absorption fine structureAbsorption spectroscopyXRDIcosahedral symmetryStackingStacking faultsGeneral Biochemistry Genetics and Molecular BiologyNanoclustersEXAFSCrystallographySettore CHIM/03 - Chimica Generale E InorganicaX-ray crystallographyPowder diffractionBasis setJournal of Applied Crystallography
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Optical characterization of Mg-doped GaN films grown by metalorganic chemical vapor phase deposition

2000

Scanning electron microscopy, micro-Raman, and photoluminescence (PL) measurements are reported for Mg-doped GaN films grown on (0001) sapphire substrates by low-pressure metalorganic chemical vapor phase deposition. The surface morphology, structural, and optical properties of GaN samples with Mg concentrations ranging from 1019 to 1021 cm−3 have been studied. In the scanning micrographs large triangular pyramids are observed, probably due to stacking fault formation and three-dimensional growth. The density and size of these structures increase with the amount of magnesium incorporated in the samples. In the photoluminescence spectra, intense lines were found at 3.36 and 3.31 eV on the tr…

PhotoluminescenceMaterials scienceIII-V semiconductorsScanning electron microscopeAnalytical chemistryGeneral Physics and AstronomySemiconductor thin filmsChemical vapor depositionStacking faultsSurface topographysymbols.namesake:FÍSICA [UNESCO]MagnesiumGallium compounds ; III-V semiconductors ; Wide band gap semiconductors ; Magnesium ; Semiconductor thin films ; MOCVD coatings ; Scanning electron microscopy ; Raman spectra ; Photoluminescence ; Surface composition ; Surface topography ; Stacking faults ; Inclusions ; ExcitonsPhotoluminescenceWurtzite crystal structureDopingUNESCO::FÍSICAGallium compoundsWide band gap semiconductorsMOCVD coatingsSurface compositionInclusionssymbolsSapphireExcitonsRaman spectraRaman spectroscopyScanning electron microscopyStacking fault
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